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02145 EFFECTS OF A SPACE ENVIRONMENT ON ELECTRONIC EQUIPMENT

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Product Number: 51300-02145-SG
ISBN: 02145 2002 CP
Author: Lisa Reiner and Behzad Bavarian
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The damaging effects of ionizing radiation on MOS technology have been extensively investigated for close to thirty years. These investigations have more mainstream relevance since this technology now serves as the fundamental component of modem microelectronic equipment. The increased demand for communication devices, has led to the deployment of more than 200 satellites into a space environment filled with ionizing atoms that can rearrange a material's atomic structure. An understanding of the device physics affecting the performance of the microelectronics is crucial and necessitates an understanding of the behavior they will manifest when exposed to large total dose radiation. In this project, the objective was to gain an understanding of the device physics for Laterally Diffused Metal Oxide Semiconductors that have been manufactured using silicon on an insulator (LDMOS-SOIs) and compare its preradiation behavior to its post radiation behavior.
The damaging effects of ionizing radiation on MOS technology have been extensively investigated for close to thirty years. These investigations have more mainstream relevance since this technology now serves as the fundamental component of modem microelectronic equipment. The increased demand for communication devices, has led to the deployment of more than 200 satellites into a space environment filled with ionizing atoms that can rearrange a material's atomic structure. An understanding of the device physics affecting the performance of the microelectronics is crucial and necessitates an understanding of the behavior they will manifest when exposed to large total dose radiation. In this project, the objective was to gain an understanding of the device physics for Laterally Diffused Metal Oxide Semiconductors that have been manufactured using silicon on an insulator (LDMOS-SOIs) and compare its preradiation behavior to its post radiation behavior.
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