Microelectronic devices are liable to failure due to different Corrosion, and electrodeposition often occur due to moisture electrochemical processes. adsorption and presence of a contaminant in the surrounding environment of these devices. The objective of this investigation was to characterize the effects of contaminants, moisture levels on growth of a dendrite-like structure which causing short between the interconnectors( copper alloy) in a electronic circuit. The dendrite growth rate was measured as function of cupric chloride, moisture levels, and applied potential across the conducting lines. It was observed that the velocity of dendrite growth can be measured, but it is generally lower than the theoretical predications.
Keywords: Microelectronic devices, Dendritic growth, Metallization, Contaminants, Dendrite velocity, Cupric chloride