The electrochemical pitting behavior of UNS C11000 copper was investigated in
synthetic potable water and several other HCO3
-, SO4
2- and Cl- containing waters using
microelectrodes and coupled multi-electrode arrays. Studies were systematically conducted
over a pH range from 6 to 10 and Cl2 (as NaOCl) additions from 1-5 ppm. Additional studies
were conducted both with and without Al(OH)3 additions found previously to promote pitting in
potable water systems. Studies of the effect of water chemistry on passivity, general corrosion,
and pitting were accomplished using the cyclic voltammetry method. Cathodic polarization
studies yielded information on the effects of water chemistry on ClO- and O2 reduction kinetics.
Critical potentials for copper pitting are observed to be brought about and decreased by certain
water chemistry variables. High [SO4
2-]/[HCO3
-] and [Cl-]/[HCO3
-] lower pitting potentials while
high [HCO3
-] and high pH improve passivity and raise pitting potentials. ClO- increases
cathodic reaction rates and thus raises open circuit potentials towards pitting potentials.
Certain water chemistries are found to promote pitting conditions where strong, persistent
anodes developed at certain sites and the pitting factor was raised. These include pH from
8-10, Cl2 levels above 2 ppm and presence of Al(OH)3. The possible roles of Al(OH)3 towards
the promotion of pitting are discussed.